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637 μW emitted terahertz power from photoconductive antennas based on rhodium doped InGaAs

: Kohlhaas, R.B.; Breuer, S.; Liebermeister, L.; Nellen, S.; Deumer, M.; Schell, M.; Semtsiv, M.P.; Masselink, W.T.; Globisch, B.


Applied Physics Letters 117 (2020), Nr.13, Art. 131105, 5 S.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
Deutsche Forschungsgemeinschaft DFG
GL 958/1-2
Deutsche Forschungsgemeinschaft DFG
MA 1749/24-2
Fraunhofer HHI ()

We investigate photoconductive terahertz (THz) emitters compatible with 1550 nm excitation for THz time-domain spectroscopy (TDS). The emitters are based on rhodium (Rh) doped InGaAs grown by molecular beam epitaxy. InGaAs:Rh exhibits a unique combination of ultrashort trapping time, high electron mobility, and high resistivity. THz emitters made of InGaAs:Rh feature an emitted THz power of 637 μW at 28 mW optical power and 60 kV/cm electrical bias field. In particular for a fiber coupled photoconductive emitter, this is an outstanding result. When these emitters are combined with InGaAs:Rh based receivers in a THz TDS system, 6.5 THz bandwidth and a record peak dynamic range of 111 dB can be achieved for a measurement time of 120 s.