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Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting

: Zhang, H.; Hagen, D.J.; Li, X.; Graff, A.; Heyroth, F.; Fuhrmann, B.; Kostanovskiy, I.; Schweizer, S.L.; Caddeo, F.; Maijenburg, A.W.; Parkin, S.; Wehrspohn, R.B.

Volltext ()

Angewandte Chemie. International edition 59 (2020), Nr.39, S.17172-17176
ISSN: 1433-7851
ISSN: 0044-8249
ISSN: 0570-0833
ISSN: 1521-3773
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IMWS ()

Transition-metal phosphides (TMP) prepared by atomic layer deposition (ALD) are reported for the first time. Ultrathin Co-P films were deposited by using PH3 plasma as the phosphorus source and an extra H2 plasma step to remove excess P in the growing films. The optimized ALD process proceeded by self-limited layer-by-layer growth, and the deposited Co-P films were highly pure and smooth. The Co-P films deposited via ALD exhibited better electrochemical and photoelectrochemical hydrogen evolution reaction (HER) activities than similar Co-P films prepared by the traditional post-phosphorization method. Moreover, the deposition of ultrathin Co-P films on periodic trenches was demonstrated, which highlights the broad and promising potential application of this ALD process for a conformal coating of TMP films on complex three-dimensional (3D) architectures.