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Noise performance of Sub-100-nm metamorphic HEMT technologies

 
: Heinz, Felix; Thome, Fabian; Leuther, Arnulf; Ambacher, Oliver

Institute of Electrical and Electronics Engineers -IEEE-:
IEEE/MTT-S International Microwave Symposium, IMS 2020 : Live Stream Event: 4 - 6 August 2020, Los Angeles
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-6815-9
S.293-296
International Microwave Symposium (IMS) <2020, Online>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
high-electron-mobilty transistors (HEMTs); low-noise amplifiers (LNAs); noise; small signal model

Abstract
This paper reports the small-signal and noise modeling of InGaAs metamorphic high-electron-mobility transistors at room temperature. Three technologies with gate length of 100 nm, 50 nm, and 35 nm are investigated and the mechanisms causing noise in the different devices are modeled. Technologies that have been scaled and processed in one foundry are modeled with the same model topology which allows for maximal comparability. In this way, a consistent comparison of the effects causing noise in sub-100 nm HEMTs is possible. It is shown that an increase of the channel noise in combination with increased gate leakage currents causes the noise figure to not improve as expected when scaling to ultra short gate length.

: http://publica.fraunhofer.de/dokumente/N-599906.html