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First demonstration of G-band broadband GaN power amplifier MMICs operating beyond 200 GHz

: Ćwikliński, Maciej; Brueckner, Peter; Leone, Stefano; Krause, Sebastian; Friesicke, Christian; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE/MTT-S International Microwave Symposium, IMS 2020 : Virtual Event: 4 - 6 August 2020, Los Angeles
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-6815-9
ISBN: 978-1-7281-6816-6
International Microwave Symposium (IMS) <2020, Online>
Fraunhofer IAF ()
broadband; G-band (140–220 GHz); gallium nitride (GaN); high electron mobility transistor (HEMT); monolithic microwave integrated circuit (MMIC); power amplifier (PA)

We report on two state-of-the-art G-band (140–220 GHz) GaN amplifiers. Employing a novel concept of a broadband and compact interstage matching network allows for incorporating a high number of gain stages. The first 10-stage amplifier (AMP1) can provide more than 15 dB of small-signal gain over a 60-GHz band (145–205 GHz) with a peak value of 30 dB at 155 GHz. This circuit can deliver up to 16.9 dBm of output power at 195 GHz. The second 10-stage amplifier (AMP2)shows on average 10 dB of small-signal gain from 162 GHz to 217 GHz. In this case, the output power reaches 15 dBm at 205 GHz. Both circuits show excellent RF-yield and homogeneity. To the best of our knowledge, this is the first demonstration of GaN-based amplifiers that are able to operate beyond 200 GHz. The circuits show also the highest ever-reported gain and output power at such high frequencies with GaN technology.