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A GaN-based currrent sense amplifier for GaN HEMTs with integrated current shunts

 
: Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver

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Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020. Proceedings : September 13-18, 2020, Vienna, Austria, Virtual Conference
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-4836-6
ISBN: 978-1-7281-4837-3
S.274-277
International Symposium on Power Semiconductor Devices and ICs (ISPSD) <32, 2020, Online>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
gallium nitride; HEMTs; current measurement; sensors; logic circuits; amplifier; power integrated circuits

Abstract
This work shows a GaN-based current sense amplifier as a read out circuit for a power GaN HEMT with integrated current shunt. In the GaN power transistor, the voltage drop of the outermost metal finger of a large-area comb structure effectively realizes a shunt acting as a current sensor. This small voltage drop of the integrated shunt (approx. 4 mV/A at 100 mΩon-resistance) is amplified by a two-stage GaN-based amplifie rwith a gain of >40 dB at room temperature. The amplifier consisting of two series-connected differential amplifiers with source follower intermediate stages was verified in a double pulse test setup up to a peak current of 11.5 A. Consequently, the proposed current sense amplifier allows a simple and potentially integratable further processing for the monitoring or control ofthe current signal.

: http://publica.fraunhofer.de/dokumente/N-599901.html