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Investigation of Two-level Defects in Injection Dependent Lifetime Spectroscopy

: Zhu, Y.; Sun, C.; Niewelt, T.; Coletti, C.; Hameiri, Z.


Solar energy materials and solar cells 216 (2020), Art. 110692, 10 S.
ISSN: 0927-0248
Fraunhofer ISE ()
Photovoltaik; boron-oxygen; defect; lifetime spectroscopy; Light-Induced Degradation; silicon; Silicium-Photovoltaik

In the majority of studies involving injection dependent lifetime spectroscopy, it is assumed that the investigated defect is a single-level defect following Shockley-Read-Hall recombination statistics. Nevertheless, in real life, two-level defects or multi-level defects are more common than single-level defects. In this study, we first investigated the possible consequences of misinterpreting a two-level defect as two single-level defects. A procedure to properly fit two-level defects in lifetime spectroscopy is subsequently proposed. At the end, we use boron-oxygen related defects as an experimental demonstration. Our experimental results reveal that the recombination statistics of boron-oxygen related defects cannot be explained by the coexistence of two independent single-level defects. A two-level defect parameterization appears to be more suitable.