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Direct bonding with on-wafer metal interconnections

: Jia, C.; Wiemer, M.; Gessner, T.


Bagdahn, J.:
Wafer-Bonding Workshop for MEMS Technologies, WBW-MEMS 2004. Special Issue : 11 - 12 October 2004, Halle: Two-day Workshop on "Wafer Bonding for MEMS Technologies"
Berlin: Springer, 2006 (Microsystem technologies 12.2006,Nr.5)
Wafer-Bonding Workshop for MEMS Technologies (WBW-MEMS) <2004, Halle/Saale>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer IZM ()

A low temperature direct bonding process with encapsulated metal interconnections was proposed. The process can be realized between silicon wafers or silicon and glass wafers. To establish well-insulated electric connection, sputtered aluminum film was patterned between a bottom thermal SiO2 and a top PE-SiO2; the consequential uneven wafer surface was planarized through a chemical mechanical polishing (CMP) step. Benefit from this smooth surface finish, direct bonding is achieved at room temperature, and a general yielding rate of more than 95% is obtained. Test results confirmed the reliability of the bonding. The main advantages of this new technology are its electric connectivity, low thermal stress and hermeticity. This process can be utilized for the packaging of micro electro mechanical system (MEMS) devices or the production Of SOI wafers with pre-fabricated electrodes and wires.