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Morphologies of GaN single crystals grown from Ga solutions under flowing ammonia

 

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Jiang, M.:
Third Asian Conference on Crystal Growth and Crystal Technology 2005 : 16 - 19 October, Beijing, China: CGCT-III
Amsterdam: Elsevier, 2006 (Journal of crystal growth 292.2006, Nr.2)
S.201-205
Asian Conference on Crystal Growth and Crystal Technology (IGCT) <3, 2005, Beijing>
Englisch
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer IISB ()

Abstract
Gallium nitride (GaN) crystals were synthesized by the reaction between gallium-containing solutions and flowing ammonia at temperatures between 900 and 1050 °C under atmospheric pressure. The crystals were colorless or amber with a size up to 1 mm. Two main morphologies were observed: platelet-like and prism-like, which depended on experimental conditions. The observed varieties of the morphology in the cross-section of GaN samples are attributed to a non-uniform distribution of nitrogen species in solution.

: http://publica.fraunhofer.de/dokumente/N-59787.html