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SiC MOSFET with a Self-Aligned Channel Defined by Shallow Source-JFET Implantation: A Simulation Study

: Sledziewski, T.; Erlbacher, T.


Yano, H.:
Silicon carbide and related materials 2019. ICSCRM 2019 : Selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan
Durnten-Zurich: TTP, 2020 (Materials Science Forum 1004)
ISBN: 978-3-0357-1579-8
ISBN: 3-0357-1579-3
International Conference on Silicon Carbide and Related Materials (ICSCRM) <18, 2019, Kyoto>
Fraunhofer IISB ()
MOSFET; self-alignment; TCAD simulation

A new concept for SiC MOSFET with a self-aligned channel is presented. The channel is defined by shallow source-JFET implantation into a counter-doped layer. This concept is verified by TCAD device simulations. It is shown that the method is applicable to fabrication of functional devices. The most critical parameter of the process is misalignment between channel and p-shield. Almost no change of electrical current in forward conduction state and the leakage current and electric field in the gate oxide in blocking state is observed for the misalignments below 400 nm.