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Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiC

: Lim, Minwho; Sledziewski, Tomasz; Rommel, Mathias; Erlbacher, Tobias; Kim, Hong-Ki; Kim, Seongjun; Shin, Hoon-Kyu; Bauer, Anton J.


Yano, H.:
Silicon carbide and related materials 2019. ICSCRM 2019 : Selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan
Durnten-Zurich: TTP, 2020 (Materials Science Forum 1004)
ISBN: 978-3-0357-1579-8
ISBN: 3-0357-1579-3
International Conference on Silicon Carbide and Related Materials (ICSCRM) <18, 2019, Kyoto>
Fraunhofer IISB ()
MOS; gate oxide; Post Oxidation Annealing; interface nitridation; oxide reliability; interface state density

In this work, the influence of pre-deposition interfacial oxidation or post-deposition interface nitridation on the performance of 4H-SiC MOS capacitors was investigated. The gate oxide was deposited by LPCVD using TEOS as a precursor. Interface breakdown strength was derived from leakage current and Time-Zero Dielectric Breakdown characteristics whereas interface quality was assessed by the determination of interface state density from the comparison of quasi-static and high frequency capacitance-voltage characteristics using high-low method. In the experimental results, it is demonstrated that the gate oxide deposited by LPCVD using TEOS which is post-deposition annealed in nitric oxide ambient is advantageous for trench-gate MOSFET due to its effectiveness for improving the interface quality and oxide reliability, whereas pre-deposition interfacial oxidation is deleterious to interface state density and breakdown strength.