Publica
Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature Applications
| Yano, H.:
18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 : Kyoto, Japan, September 29 to October 4, 2019
Durnten-Zurich: TTP, 2020 (Materials Science Forum 1004)
S.1123-1128 |
| International Conference on Silicon Carbide and Related Materials (ICSCRM) <18, 2019, Kyoto> |
|
| Englisch |
| Konferenzbeitrag |
| Fraunhofer IISB () |
| analog CMOS circuits; channel implantation; high temperature; mobility; MOSFET; threshold voltage |
Abstract
In this work, the impact of channel implantations (IMP) on the electrical characteristics of SiC n-and p-MOSFETs and analog SiC-CMOS operational amplifiers (OpAmp) is investigated. For this purpose, MOSFETs and Miller OpAmps with and without IMP were fabricated and electrically characterized from room temperature up to 350°C. For devices with IMP the absolute values of the threshold voltages of n-and p-MOSFETs were reduced by 1.5 V and the mobility of the n-MOSFET was increased from 13 to 23 cm2/Vs whereas the mobility of the p-MOSFET remained constant at 6 cm2/Vs. For the resulting OpAmp with IMP, the common-mode input voltage range as well as the open loop gain was increased by 1.5 V and 4 dB compared to non-implanted devices. This improvement was observed across the entire analyzed temperature range from room temperature up to 350°C.