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Silicon-vacancy color centers in phosphorus-doped diamond

: Flatae, A.M.; Lagomarsino, S.; Sledz, F.; Soltani, N.; Nicley, S.S.; Haenen, K.; Rechenberg, R.; Becker, M.F.; Sciortino, S.; Gelli, N.; Giuntini, L.; Taccetti, F.; Agio, M.


Diamond and Related Materials 105 (2020), Art.107797
ISSN: 0925-9635
Fraunhofer CCD ()

The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this study, we create SiV color centers in diamond samples with different phosphorus concentrations and show that the fluorescence background due to doping, nitrogen-impurities and ion implantation induced defects can be significantly suppressed. Single-photon emitters in phosphorus-doped diamond are obtained at low Si-ion implantation fluences.