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Ruthenium(II) MOCVD Precursors for Phosphorus‐Doped Ruthenium Layer Formation

: Preuß, A.; Tamuliene, J.; Madajska, K.; Szymanska, I.B.; Korb, M.; Rüffer, T.; Jeschke, J.; Melzer, M.; Bankwitz, J.; Schulz, S.E.; Lang, H.


European journal of inorganic chemistry (2020), Nr.17, S.1612-1623
ISSN: 1434-1948
ISSN: 1099-0682
Fraunhofer ENAS ()

The synthesis and solid‐state structure of Ru(CO)2(PEt3)2(O2CR)2 (4a –f , R = Me, Et, i Pr, t Bu, CH2OMe, CF3) is reported. The vapor pressure of 4a –f was measured, ranging from 6.3 mbar (4f ) to 14.8 at 190 °C (4e ). Complexes 4a –f decompose between 210–350 °C of which 4c shows the lowest (248 °C) and 4e (280 °C) the highest onset temperature. TG‐MS studies (4f ) showed subsequent decarbonylation and decarboxylation processes. To determine the gas phase composition VT IR studies were performed. Based on TG‐MS, VT IR and DFT calculations decomposition mechanisms are discussed. Complexes 4a –f are suited as MOCVD precursors, producing dense layers of 25–50 nm thickness, consisting of 57 at‐% Ru, up to 18.2 at‐% P and as impurities C, N and O. A carbon‐free Ru(P) layer was obtained with 4a as CVD precursor.