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Validation of the Industry-Standard ASM-GaN Model for Gate-Length Scaling

 
: Albahrani, Sayed Ali; Hodges, Jason; Heuken, Lars; Schwantuschke, Dirk; Gneiting, Thomas; Burghartz, Joachim N.; Khandelwal, Sourabh

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Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
4th Australian Microwave Symposium, AMS 2020 : 13-14 February, 2020, University of Technology Sydney, Sydney, Australia
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-1049-3
ISBN: 978-1-7281-1050-9
S.71-72
Australian Microwave Symposium (AMS) <4, 2020, Sydney>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()

Abstract
This paper validates the industry standard ASMGaN compact model in terms of capturing the effect of gatelength scaling. Pulsed IV measurements were performed to measure the variation in the IV characteristics of the GaN HEMT structure under test with gate length, in isolation from the effect of trapping. The model has been validated by comparing the simulation results of the model with the pulsed IV measurement results of three AlGaN/GaN Schottky HEMTs which differed only in terms of their gate lengths.

: http://publica.fraunhofer.de/dokumente/N-596024.html