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Strain relaxation in nanopatterned strained silicon round pillars

: Himcinschi, C.; Singh, R.; Radu, I.; Milenin, A.P.; Erfurth, W.; Reiche, M.; Gösele, U.; Christiansen, S.H.; Muster, F.; Petzold, M.


Applied Physics Letters 90 (2007), Nr.2, Art. 021902, 3 S.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IWM ()
residual stress; stress relaxation; raman spectroscopy; finite element analysis

Periodic arrays of strained Si (sSi) round nanopillars were fabricated on sSi layers deposited on SiGe virtual substrates by electron-beam lithography and subsequent reactive-ion etching. The strain in the patterned sSi nanopillars was determined using high-resolution UV micro-Raman spectroscopy. The strain relaxes significantly upon nanostructuring: from 0.9% in the unpatterned sSi layer to values between 0.22% and 0.57% in the round sSi pillars with diameters from 100 up to 500 nm. The strain distribution in the sSi nanopillars was analyzed by finite element (FE) modeling. The FE calculations confirm the strain relaxation after patterning, in agreement with the results obtained from Raman spectroscopy.