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Uniaxially strained silicon by wafer bonding and layer transfer

 
: Himcinschi, C.; Radu, I.; Muster, F.; Singh, R.; Reiche, M.; Petzold, M.; Gösele, U.; Christiansen, S.H.

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Clerc, R.:
Papers selected from the EUROSOI'06 Conference : Papers have been selected from the presentations given at EUROSOI'06 (Second Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits), which was organized in Grenoble, from 8 to 10 March 2006
Amsterdam: Elsevier, 2007 (Solid-state electronics 51.2007, Nr.2)
S.226-230
Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits <2, 2006, Grenoble>
Englisch
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer IWM ()
wafer; bonding; strained silicon; uniaxial strain; raman spectroscopy

Abstract
Uniaxial strain on wafer-level was realised by mechanically bending and direct wafer bonding of Si wafers in the bent state followed by thinning one of the Si wafers by the smart-cut process. This approach is flexible and allows to obtain different strain values at wafer-level in both tension and compression. UV micro-Raman spectroscopy was used to determine the strain in the thin transferred Si layers. Numerical modelling by 3D finite elements of the strain provided a good description of the experimental results.

: http://publica.fraunhofer.de/dokumente/N-59321.html