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Structural investigations of epitaxial InN by x-ray photoelectron diffraction and x-ray diffraction

: Hofstetter, D.; Despont, L.; Garnier, M.G.; Baumann, E.; Giorgetta, F.R.; Aebi, P.; Kirste, L.; Lu, H.; Schaff, W.J.


Applied Physics Letters 90 (2007), Nr.19, Art. 191912, 3 S.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()

The authors investigated a 1 mu m thick molecular beam epitaxy-grown InN film by means of full hemispherical x-ray photoelectron diffraction and high resolution x-ray diffraction. While x-ray diffraction reveals that this nominally hexagonal InN layer contains roughly 1% of cubic phase InN, a comparison between measured and simulated x-ray photoelectron diffraction data allowed them to directly determine the polarity of the crystal. Furthermore, the data indicate that the InN surface consists of a mosaic of domains oriented at an azimuth of 180 degrees to each other, where the azimuth corresponds to the rotation angle around the [0001] axis.