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Thick PZT layers deposited by gas flow sputtering

 
: Jacobsen, H.; Quenzer, H.-J.; Wagner, B.; Ortner, K.; Jung, T.

:

Bright, V. ; Institute of Electrical and Electronics Engineers -IEEE-:
Micromechanics. Special Issue of the Micromechanics Section of Sensors and Actuators (SAMM) : Based on contributions revised from the technical digest of the IEEE 19th International Conference on Micro Electro Mechanical Systems (MEMS-2006), Istanbul, Turkey, 22 - 26 January 2006
Amsterdam: Elsevier, 2007 (Sensors and actuators. A, Physical 135.2007, Nr.1)
S.23-27
International Conference on Micro Electro Mechanical Systems (MEMS) <19, 2006, Istanbul>
Englisch
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer ISIT ()
Fraunhofer IST ()
PZT; gas flow sputtering; actuator; piezoelectric

Abstract
Polycrystalline lead zirconate titanate (PZT) thin films in the range of 3-16 µm were crack free deposited on silicon substrates in a high rate gas flow sputtering process. Gas flow sputtering uses the hollow cathode effect which results into high deposition rates of about 200-250 nm/min (1 1 1) textured platinum was used as bottom electrode to assist the nucleation of PZT.
Material properties of the thin films like topography, morphology, chemical composition, and structure as well as the electrical- and electromechanical properties are evaluated. The sputtered PZT layers show a high relative permittivity Er between 1000 and 1800 and a distinct ferroelectric hysteresis with a remnant polarisation of 17 µC/cm2 and a coercive field strength of 5.4 kV/mm. Piezoelectric coefficients d33 of about 27.3-79.7 pm/V were observed.

: http://publica.fraunhofer.de/dokumente/N-59298.html