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E-band balanced broadband driver amplifier MMIC with 1.8 THz gain-bandwidth product

 
: Schoch, Benjamin; Tessmann, Axel; Wagner, Sandrine; Kallfass, Ingmar

Verband Deutscher Elektrotechniker e.V. -VDE-, Berlin:
German Microwave Conference, GeMiC 2020 : March 09-11, 2020, Cottbus, Germany
Piscataway, NJ: IEEE, 2020
ISBN: 978-3-9820397-1-8
ISBN: 978-1-7281-4206-7
S.9-12
German Microwave Conference (GeMiC) <2020, Cottbus>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
E-band; power amplifier (PA); metamorphic high electron mobility transistor (mHEMT); milimeter-wave monolithic integrated circuit (MMIC)

Abstract
This paper presents an E-band (60 - 90 GHz) balanced driver amplifier in a 50nm InGaAs-based metamorphic high electron mobility transistor technology. The amplifier is realized as a millimeter-wave monolithic integrated circuit and is designed to drive a high power output stage in a multi-gigabit communication system. The three stage driver amplifier is balanced via 90° hybrid Lange couplers. To track the powerlevels, especially to fulfill regulated power density requirements, a detector was placed at the output of the amplifier. On-wafer measurements were performed and a maximum gain of 35 dB a t66 GHz could be achieved. Between 60 to 90GHz a gain greater than 30 dB could be measured which results in a gain-bandwidth product of 1.8 THz. With four parallel common source transistors in the output stage a maximum output power of 14.5dBm at 73.5 GHz could be reached.

: http://publica.fraunhofer.de/dokumente/N-589847.html