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  4. Broadband 300-GHz power amplifier MMICs in InGaAs mHEMT technology
 
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2020
Journal Article
Title

Broadband 300-GHz power amplifier MMICs in InGaAs mHEMT technology

Abstract
In this paper we report on compact solid-state power amplifier (SSPA) millimeter-wave monolithic integrated circuits (MMICs) covering the 280-330-GHz frequency range. The technology used is a 35-nm gate-length InGaAs metamorphic high-electron-mobility transistor (mHEMT) technology. Two power amplifier MMICs are reported, based on a compact unit amplifier cell which is parallelized two times using two different Wilkinson power combiners. The Wilkinson combiners are designed using elevated coplanar waveguide (CPW) and air-bridge thin-film transmission lines in order to implement low-loss 70- Olines in the back-end-of-line (BEOL) of this InGaAs mHEMT technology. The five-stage SSPA MMICs achieve a measured small-signal gain around 20dB over the 280-335-GHz frequency band. State of-the-art output power performance is reported, achieving at least 13dBm over the 286-310-GHz frequency band, with a peak output power of 13.7dBm (23.4mW) at 300GHz. The PA MMICs are designed for a reduced chip width while maximizing the total gate width of 512µm in the output stage, using a compact topology based on cascode and common-source devices, improving the output power per required chip width significantly.
Author(s)
John, Laurenz  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Tessmann, Axel  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Leuther, Arnulf  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Neininger, Philipp  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Merkle, Thomas  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Zwick, Thomas
KIT
Journal
IEEE Transactions on Terahertz Science and Technology  
Open Access
Link
Link
DOI
10.1109/TTHZ.2020.2965808
Additional full text version
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Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • solid-state power amplifier

  • InGaAs mHEMT

  • sub-mm-wave operation

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