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2007
Journal Article
Titel
Injection level dependent luminescence characteristics of UV-violet emitting (AlGaIn)N LED structures
Alternative
Abhängigkeit der Lumineszenz Charakteristik von UV-violett emittierenden (AlGaIn)N LED Strukturen von der Injektionsdichte
Abstract
A series of (AlGaIn)N LEDs covering the 377 to 428 nm wavelength interval has been analyzed by pulsed electro- and temperature dependent photo-luminescence with respect to the carrier density dependence of the quantum efficiency and peak position. A non-thermal rollover of the quantum efficiency vs. current is observed for the LEDs with higher In content and longer wavelengths (lambda > 400 nm). The photoluminescence data reveal In induced band tails as well as the presence of a quantum confined stark effect. Both effects contribute to the observed non-thermal rollover.
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