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  4. Characterization of a silicon carbide BCD process for 300°C circuits
 
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2019
Conference Paper
Title

Characterization of a silicon carbide BCD process for 300°C circuits

Abstract
This paper describes a silicon carbide (SiC) Bipolar-CMOS-DMOS (BCD) process technology and presents the corresponding characterization results. The process enables the design of integrated circuits (ICs) capable of high temperature operation and heterogeneous integration into SiC power modules. The paper showcases the cross-section of the triple-well, single metal layer SiC BCD process and details the key process challenges. Characterization results for NMOS, PMOS, LDMOS, and BJT structures are presented. DC output characteristics of the standard 1.5 mm NMOS and PMOS are shown for temperatures of 25°C and 300°C. The drain-to-source breakdown voltages observed for the LDMOS (at 1 nA leakage) is 178 V at 25°C. The integrated passives available in the process include N-diffusion resistors with a sheet resistance of approximately 1.2 kO/OS and poly-to-N-diffusion capacitors with 0.612 fF/mm 2 capacitance.
Author(s)
Abbasi, A.
Mixed-Signal Computer Aided Design Research (MSCAD) Lab, University of Arkansas, Department of Electrical Engineering, Fayetteville, AR 72701, United States
Roy, S.
Mixed-Signal Computer Aided Design Research (MSCAD) Lab, University of Arkansas, Department of Electrical Engineering, Fayetteville, AR 72701, United States
Murphree, R.
Mixed-Signal Computer Aided Design Research (MSCAD) Lab, University of Arkansas, Department of Electrical Engineering, Fayetteville, AR 72701, United States
Rashid, A.-U.
Mixed-Signal Computer Aided Design Research (MSCAD) Lab, University of Arkansas, Department of Electrical Engineering, Fayetteville, AR 72701, United States
Hossain, M.M.
Mixed-Signal Computer Aided Design Research (MSCAD) Lab, University of Arkansas, Department of Electrical Engineering, Fayetteville, AR 72701, United States
Lai, P.
Mixed-Signal Computer Aided Design Research (MSCAD) Lab, University of Arkansas, Department of Electrical Engineering, Fayetteville, AR 72701, United States
Fraley, J.
Wolfspeed A CREE Company, Fayetteville, AR 72701, United States
Erlbacher, T.  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Chen, Z.
Mixed-Signal Computer Aided Design Research (MSCAD) Lab, University of Arkansas, Department of Electrical Engineering, Fayetteville, AR 72701, United States
Mantooth, A.
Mixed-Signal Computer Aided Design Research (MSCAD) Lab, University of Arkansas, Department of Electrical Engineering, Fayetteville, AR 72701, United States
Mainwork
7th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2019  
Conference
Workshop on Wide Bandgap Power Devices and Applications (WiPDA) 2019  
DOI
10.1109/WiPDA46397.2019.8998920
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • Bipolar

  • CMOS

  • high temperature

  • integrated circuits

  • LDMOS

  • silicon carbide

  • wide bandgap

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