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A 19.5 dBm Power Amplifier with Highly Accurate 8-bit Power Controlling for Automotive Radar Applications in a 28 nm CMOS Technology

 
: Reiter, D.; Li, H.; Knapp, H.; Kammerer, J.; Fritzin, J.; Majied, S.; Sene, B.; Pohl, N.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 : 3-6 November 2019, Nashville
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-7281-0586-4
ISBN: 978-1-7281-0587-1
4 S.
BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)<2019, Nashville/Tenn.>
Englisch
Konferenzbeitrag
Fraunhofer FHR ()

Abstract
A 19.5 dBm power amplifier (PA) with a fine power step-size of 0.5 dB for an output power from 5 dBm to 19.5 dBm is designed and implemented in an advanced CMOS technology. This accurate power controlling is achieved by using an 8-bit digitally controlled current source and this ensures also a stable power controlling over the temperature and supply range with a 29 dB dynamic range. The implemented three-stage PA with a device stacking technique has a maximum small signal gain of 43 dB and delivers a maximum saturated output power of 19.5 dBm at 25 °C and 18.5 dBm at 125 °C. The PA core has an area of 0.053 mm 2 and consumes 290 mA including all on-chip biasing circuits from a single 2.1 V power supply. To the best of authors' knowledge, the achieved maximum output power and also the power step-size are record values in advanced bulk CMOS technologies without power combining.

: http://publica.fraunhofer.de/dokumente/N-585542.html