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Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction

 
: Lederer, M.; Kämpfe, T.; Vogel, N.; Utess, D.; Volkmann, B.; Ali, T.; Olivo, R.; Müller, J.; Beyer, S.; Trentzsch, M.; Seidel, K.; Eng, L.M.

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Volltext ()

Nanomaterials 10 (2020), Nr.2, Art. 384, 11 S.
ISSN: 2079-4991
Englisch
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IPMS ()

Abstract
The microstructure of ferroelectric hafnium oxide plays a vital role for its application, e.g., non-volatile memories. In this study, transmission Kikuchi diffraction and scanning transmission electron microscopy STEM techniques are used to compare the crystallographic phase and orientation of Si and Zr doped HfO2 thin films as well as integrated in a 22 nm fully-depleted silicon-on-insulator (FDSOI) ferroelectric field effect transistor (FeFET). Both HfO2 films showed a predominately orthorhombic phase in accordance with electrical measurements and X-ray diffraction XRD data. Furthermore, a stronger texture is found for the microstructure of the Si doped HfO2 (HSO) thin film, which is attributed to stress conditions inside the film stack during crystallization. For the HSO thin film fabricated in a metal-oxide-semiconductor (MOS) like structure, a different microstructure, with no apparent texture as well as a different fraction of orthorhombic phase is observed. The 22 nm FDSOI FeFET showed an orthorhombic phase for the HSO layer, as well as an out-of-plane texture of the [111]-axis, which is preferable for the application as non-volatile memory.

: http://publica.fraunhofer.de/dokumente/N-582392.html