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Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics

: Weiss, Charlotte; Park, Seonyong; Lefèvre, Jérémie; Boizot, Bruno; Mohr, Christian; Cavani, Olivier; Picard, Sandrine; Kurstjens, Rufi; Niewelt, Tim; Janz, Stefan

Preprint urn:nbn:de:0011-n-5822312 (1.3 MByte PDF)
MD5 Fingerprint: 15925089b325db259292b94a407c27ca
Erstellt am: 3.6.2020

Solar energy materials and solar cells 209 (2020), Art. 110430, 21 S.
ISSN: 0927-0248
European Commission EC
H2020; 687336; SiLaSpaCe
Si based Layer Stacks for Rear-Side Passivation and Enhanced Reflection of GaInP/GaInAs/Ge Triple-Junction Space Solar Cells
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer ISE ()
SIC passivation; space photovoltaics; lowly doped Ge; proton irradiation; electron irradiation; Photovoltaik; III-V und Konzentrator-Photovoltaik; III-V Epitaxie und Solarzellen; passivation; photovoltaic; doped Ge; irradiation

We report on the effect of electron and proton irradiation on effective minority carrier lifetimes (τeff) in p-type Ge wafers. Minority carrier lifetimes are assessed using the microwave-detected photoconductance decay (μW-PCD) method. We examine the dependence of τeff on the p-type doping level and on electron and proton radiation fluences at 1 MeV. The measured τeff before and after irradiation are used to estimate the minority carriers’ diffusion lengths, which is an important parameter for solar cell operation. We observe τeff ranging from ≈ 50 to 230 μs for Ge doping levels between 1 × 1017 and 1 × 1016−3, corresponding to diffusion lengths of ≈ 500–1400 μm. A separation of τeff in Ge bulk lifetime and surface recombination velocity is conducted by irradiating Ge lifetime samples of different thicknesses. The possible radiation-induced defects are discussed on the basis of literature.