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Is an antiparallel SiC-Schottky diode necessary? Calorimetric analysis of SiC-MOSFETS switching behavior

: Kreutzer, O.; Billmann, M.; März, M.

MESAGO PCIM GmbH, Stuttgart:
PCIM Europe 2018, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Proceedings : Nuremberg, 05 - 07 June 2018, CD-ROM
Berlin: VDE-Verlag, 2018
ISBN: 978-3-8007-4646-0
ISBN: 3-8007-4646-8
PCIM Europe <2018, Nuremberg>
Fraunhofer IISB ()

Within this paper the switching losses of a Wolfspeed 25mOhm bare die SiC-MOSFET are measured in a hard switching 800 V DCDC-converter with five different commutation partners. A small and a large SiC Schottky diode, an SiC-MOSFET body diode and a combination of body and Schottky diode are compared at different switching speeds and switching currents. The results show quite well the reverse recovery charge dependence of SiC-MOSFET's body diode on switching speed. In contrast to common electric measurements where losses are calculated, the calorimetric measurements reveal exactly what shall be quantified: The temperature rise of the switching MOSFET.