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2018
Conference Paper
Titel
The effect of flash lamp annealing on the performance of MOTFTs
Abstract
In this study, we report about investigations on the performance of non-IGZO thin-film transistors (MOTFTs) based on the metal-oxides IAZO and IZO. The metal-oxides for the channel and insulator were coated in a pilot-scale in-line coating machine ILA 900 by rf sputtering of a single magnetron system on 550×670 mm2 glass substrates (Gen 3.5 format) with a thickness of 0.5 mm. After coating, the films were annealed by in-line flash lamp annealing (FLA) in vacuum atmosphere. We investigated the effect of the FLA process step on the carrier mobility and the stability of the MOTFTs.