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The effect of flash lamp annealing on the performance of MOTFTs

: Junghaehnel, M.; Preussner, T.; Westphalen, J.

Society for Information Display -SID-:
25th International Display Workshops (IDW '18) : Nagoya, Japan, 12-14 December 2018
Red Hook, NY: Curran, 2018
ISBN: 978-1-5108-8391-8
International Display Workshops (IDW) <25, 2018, Nagoya>
Fraunhofer FEP ()

In this study, we report about investigations on the performance of non-IGZO thin-film transistors (MOTFTs) based on the metal-oxides IAZO and IZO. The metal-oxides for the channel and insulator were coated in a pilot-scale in-line coating machine ILA 900 by rf sputtering of a single magnetron system on 550×670 mm2 glass substrates (Gen 3.5 format) with a thickness of 0.5 mm. After coating, the films were annealed by in-line flash lamp annealing (FLA) in vacuum atmosphere. We investigated the effect of the FLA process step on the carrier mobility and the stability of the MOTFTs.