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A TCAD Process Model with Monte Carlo Ion Implantation for 4H-SiC JBS Diode Analysis and Design

Poster presented at ICSCRM 2019, International Conference on Silicon Carbide and Related Materials, September 29 - October 4, 2019, Kyoto, Japan
: Büttner, J.; Beuer, S.; Petersen, S.; Rommel, M.; Erlbacher, T.; Bauer, A.

Poster urn:nbn:de:0011-n-5786704 (833 KByte PDF)
MD5 Fingerprint: aeea7aa764bbdaef93f3ee7171bcd4c7
Erstellt am: 6.3.2020

2019, 1 Folie
International Conference on Silicon Carbide and Related Materials (ICSCRM) <18, 2019, Kyoto>
Poster, Elektronische Publikation
Fraunhofer IISB ()
TCAD Process Model; MC ION Implantation

The electrical characteristics of Junction Barrier Schottky (JBS) diodes are primarily determined by the geometry and dimensions of the junction barrier which is formed by ion implantation. The final doping profile is affected by the implantation parameters and process conditions. Channeling, lateral straggling, as well as flank angle and resolution of the implantation mask have an influence on the profile shape. A TCAD process model was developed to reproduce the parameters and conditions of the ion implantation and to analyze the electrical characteristics of devices depending on the design of the junction barrier.