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Fabrication and functional properties of additively manufactured NiTi lattice structures using adaptive scanning strategies

Presentation held at The World comes here, TMS 2020, 149th Annual Meeting & Exhibition, co-located 9th International Symposium on Lead and Zinc Processsing, PbZn 2020, February 23-27, 2020, San Diego, California
: Gustmann, Tobias; Korn, Hannes; Werner, M.; Gutmann, F.; Kappe, K.; Wenz, F.; Straub, T.; Koch, Peter; Stelzer, Ralph; Drossel, Welf-Guntram

Präsentation urn:nbn:de:0011-n-5786189 (3.9 MByte PDF)
MD5 Fingerprint: 74622fe5ff5c05d2572603090d265081
Erstellt am: 5.3.2020

2020, 15 Folien
The Minerals, Metals and Materials Society (TMS Annual Meeting and Exhibition) <149, 2020, San Diego/Calif.>
International Symposium on Lead and Zinc Processing (PbZn) <9, 2020, San Diego/Calif.>
Vortrag, Elektronische Publikation
Fraunhofer IWU ()
Fraunhofer EMI ()
Fraunhofer IWM ()
additive Fertigung; Laser-Strahlschmelzen; Formgedächtnislegierung; Nitinol; Superelastizität; Gitterstruktur; Prozessoptimierung

Near-equiatomic NiTi-alloys are attractive materials for medical applications due to their functional properties (pseudoelasticity). However, most of the manufacturing steps needed for processing of NiTi are challenging. Thus, laser beam melting (LBM) was used and identified as a suitable method for the fabrication of a wide range of complex NiTi structures with low impurity pick up and good functional properties. Besides obtaining as-built parts with pronounced shape-recovery, efforts have been made to improve the quality of the processed specimens (e.g. accuracy). In our work, we demonstrate that delicate NiTi lattice structures can be manufactured on a conventional LBM machine using point scanning strategies. Process parameters and the type of point exposure have been optimized to obtain struts (below 200 microns) with high evenness and smooth surfaces. Due to this reason, the use of point scanning strategies is a promising approach for LBM of NiTi lattices with improved mechanical properties.