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Non-Destructive Approach for Measuring Base Resistivity of Emitter-Diffused, Partially-Processed Wafers Using Temperature-Stage QSSPC

: Kuruganti, V.; Haunschild, J.; Brand, A.; Al-Hajjawi, S.; Rein, S.; Glunz, S.W.

Volltext urn:nbn:de:0011-n-5782910 (1.1 MByte PDF)
MD5 Fingerprint: 69a1fa7a8164ea21233031fdaf5d322d
Erstellt am: 3.3.2020

36th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2019 : Proceedings of the international conference held in Marseille, France, 09-13 September 2019
Marseille, 2019
ISBN: 3-936338-60-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <36, 2019, Marseille>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Messtechnik und Produktionskontrolle; characterisation; silicon; etching

A novel non-destructive and contactless approach for measuring the base resistivity of emitter-diffused, partially-processed wafers is introduced. The method is based on temperature-dependent resistivity analysis and referred as temperature-dependent resistivity slope model (TRSM). It is developed for p-type boron-doped silicon wafers used in industrial applications with base resistivities ranging from 1 to 5 Ωcm. A sensitivity analysis is carried out on TRSM to determine the limits of this simple approach and the results show that TRSM can determine the base resistivity with an accuracy of 90%. The main limiting factor is the reproducibility from the measuring tool with a mean error of 6% on the TRSM results. Finally, the base resistivity of emitter-diffused, partially-processed wafers (in this work referred as precursor wafers) obtained from TRSM is compared to two reference approaches and showed mean error percentages of less than 10%.