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Inline Deposited PassDop Layers for Rear Side Passivation and Contacting of p-type c-Si PERL Solar Cells with High Bifaciality

 
: Norouzi, M.H.; Saint-Cast, P.; Lohmüller, E.; Lohmüller, S.; Steinhauser, B.; Wolf, A.; Hofmann, M.

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Volltext urn:nbn:de:0011-n-5781853 (1.5 MByte PDF)
MD5 Fingerprint: 7bdfbfc2f67b232ddffc9187595fe584
Copyright AIP
Erstellt am: 3.3.2020


Poortmans, J. ; American Institute of Physics -AIP-, New York:
SiliconPV 2019, the 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium
New York, N.Y.: AIP Press, 2019 (AIP Conference Proceedings 2147)
ISBN: 978-0-7354-1892-9
Art. 110005, 7 S.
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <9, 2019, Leuven>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Dotierung und Diffusion; Oberflächen: Konditionierung; Passivierung; Lichteinfang; passivation; doping; solar cells; contacting

Abstract
We investigate stacks of aluminum oxide (Al2O3) and boron-doped silicon nitride (SiNX:B) layers for the rear side passivation and local doping of p-type silicon solar cell samples aiming for the realization of bifacial passivated emitter and rear locally diffused (biPERL) solar cells. The local p+-doped back surface field regions are formed by laser doping and are electrically contacted using commercially available screen-printed and fired silver-aluminum (AgAl) or silver (Ag) contacts. This approach is referred to as “pPassDop”. Laser doping results in highly-doped silicon with sheet resistances as low as 15 Ω/sq and surface doping concentrations up to 6×1019 cm−3. Low specific contact resistances around 1 mΩ cm2 and 5 mΩ cm2 are measured for the screen-printed and fired AgAl and Ag contacts, respectively. In addition, the influence of each individual layer within the pPassDop layer stack on the doping properties is investigated. In order to separate the impact of aluminum and boron doping, firstly the influence of the Al2O3 layer thickness (0 nm, 4 nm, 6 nm) below the SiNX:B capping layer is studied. Secondly, a conventional undoped SiNX capping layer is applied on a 6 nm-thick Al2O3 layer. The roles of each dopant are studied by measuring the doping profile and contact resistivity.

: http://publica.fraunhofer.de/dokumente/N-578185.html

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