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Nanocutting mechanism of 6H-SiC investigated by scanning electron microscope online observation and stress-assisted and ion implant-assisted approaches

: Xu, Zongwei; Liu, Lei; He, Zhongdu; Tian, Dongyu; Hartmaier, Alexander; Zhang, Junjie; Luo, Xichun; Rommel, Mathias; Nordlund, Kai; Zhang, Guoxiong; Fang, Fengzhou


The International Journal of Advanced Manufacturing Technology 106 (2020), Nr.9-10, S.3869-3880
ISSN: 0268-3768
ISSN: 1433-3015
National Natural Science Foundation of China NSFC
National Natural Science Foundation of China NSFC
Fraunhofer IISB ()
diamond turning; silicon carbide; phase transformation; surface integrity; MD simulation; ion beam machining

Nanocutting mechanism of single crystal 6H-SiC is investigated through a novel scanning electron microscope setup in this paper. Various undeformed chip thicknesses on (0001) < 1â100 > orientation are adopted in the nanocutting experiments. Phase transformation and dislocation activities involved in the 6H-SiC nanocutting process are also characterized and analyzed. Two methods of stress-assisted and ion implant-assisted nanocutting are studied to improve 6H-SiC ductile machining ability. Results show that stress-assisted method can effectively decrease the hydrostatic stress and help to activate dislocation motion and ductile machining; ion implant-induced damages are helpful to improve the ductile machining ability from MD simulation and continuous nanocutting experiments under the onl ine observation platform.