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Modeling and simulation of parasitic effects in stacked silicon

: Elst, G.; Schneider, P.; Ramm, P.

Bower, C.A. ; Materials Research Society -MRS-:
Enabling Technologies for 3-D Integration : Symposium held November 27-29, 2006, Boston, Massachusetts, U.S.A.
Pittsburgh, Pa.: MRS, 2007 (Materials Research Society symposia proceedings 970)
ISBN: 1-558-99927-2
ISBN: 978-1-558-99927-5
Symposium Y: "Enabling Technologies for 3-D Integration" <2006, Boston/Mass.>
Materials Research Society (Fall Meeting) <2006, Boston/Mass.>
Fraunhofer IIS, Institutsteil Entwurfsautomatisierung (EAS) ()

Devices and interconnect structures of new semiconductor and packaging technologies show parasitic phys. effects with a growing influences of the system behavior. Therefore, the design technol. has to be developed and adjusted to ensure high system performance and reliability of these very complex systems on chip and in a stack. The influences of parasitic effects on the circuit behavior have to be minimized within the design process. Typical parasitic effects of the Vertical System Integration (VSI) by stacked silicon are discussed in this paper. Effects like electro thermal coupling, electro-magnetic interactions, and the sensitivity due to parameter variations and their influence to the system behavior are identified and modeled. Approaches for minimization of these influences by design modifications are presented.