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Electron paramagnetic resonance characterization of aluminum ion implantation induced defects in 4H-SiC

: Wang, Xiuhong; Xu, Zongwei; Rommel, Mathias; Dong, Bing; Song, Le; Tee, Clarence Augustine T.H.; Fang, Fengzhou

Volltext ()

Nanotechnology and precision engineering 2 (2019), Nr.4, S.157-162
ISSN: 1672-6030
ISSN: 2589-5540
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IISB ()
silicon carbide; defects; carbon vacancy

Deep-level defects in silicon carbide (SiC) are critical to the control of the performance of SiC electron devices. In this paper, deep-level defects in aluminum ion-implanted 4H-SiC after high-temperature annealing were studied using electron paramagnetic resonance (EPR) spectroscopy at temperatures of 77 K and 123 K under different illumination conditions. Results showed that the main defect in aluminum ion-implanted 4H-SiC was the positively charged carbon vacancy (VC+), and the higher the doping concentration was, the higher was the concentration of VC+. It was found that the type of material defect was independent of the doping concentration, although more VC+ defects were detected during photoexcitation and at lower temperatures. These results should be helpful in the fundamental res earch of p-type 4H-SiC fabrication in accordance with functional device development.