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2001
Journal Article
Titel
Improvement in electrical properties of Simni films by multiple-steps implantation
Abstract
SOI-SIMNI (Silicon On Insulator-Separation by Implanted Nitrogen) films were formed by standard and multiple-step implantation methods. The Hall-effects measurements (4 - 300K) show that the multiple-step implanted SIMNI films have a lower sheet resistance and higher carrier mobility than those in standard SIMNI films. The DLTS results indicated that there is a deep level defects E-t=0.152 eV in the standard SIMNI films,and no deep level defects in the multiple-step implanted SIMNI films,which have good electrical properties.
Language
English
Chinese