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Optimization of metal-organic chemical vapor deposition regrown n-GaN

 
: Leone, Stefano; Brueckner, Peter; Kirste, Lutz; Doering, Philipp; Fuchs, Theo; Müller, Stefan; Prescher, Mario; Quay, Rüdiger; Ambacher, Oliver

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Volltext ()

Physica status solidi. B (2019), Online First, Art. 1900436, 8 S.
ISSN: 0031-8957
ISSN: 0370-1972
Englisch
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IAF ()

Abstract
GaN devices for high-frequency and high-power applications often need n-doped GaN layers on top of their structures. Such layers can be either grown in an epitaxial reactor or formed by implantation or annealing of Si-containing layers (e.g., a SiO2 mask). These processes are typically performed at high temperatures, which generate the undesired effect of atom diffusion between the different epitaxial layers; consequently, the electrical performance of the final device will be hampered. Herein, an optimized epitaxial growth process of n-GaN layers is developed with the focus on minimizing the atom diffusion process, while preserving a high material quality and excellent electrical characteristics, such as very low contact resistance for n-GaN ohmic contacts or high electron mobility in GaN npin structures. A low growth temperature process combined with improved growth conditions to minimize the incorporation of impurities is successfully optimized and demonstrated on different epitaxial reactors.

: http://publica.fraunhofer.de/dokumente/N-572622.html