Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Influence of Quantum Dot Characteristics on the Performance of Hybrid SET-FET Circuits

Einfluss der Quantenpunkteigenschaften auf das Bauelementeverhalten von hybriden SET-FET-Schaltungen
: Amat, Esteve; Klüpfel, Fabian; Bausells, Joan; Perez-Murano, Francesc

Volltext (PDF; )

IEEE transactions on electron devices 66 (2019), Nr.10, S.4461-4467
ISSN: 0018-9383
ISSN: 1557-9646
European Commission EC
H2020; 688072; IONS4SET
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IISB ()
nanowires; quantum dot (QD); single electron transistor (SET); variability

Quantum dots (QDs) can be used as conductive islands to build-up single-electron transistors (SETs). The characteristics of the QDs define the functional performance of the SETs. In consequence, analyzing the influence of the variations of QD dimensions on the performance of hybrid SET-FET circuits is of high relevance. We employ a self-developed SET compact model which is calibrated to 3-D quantum-mechanics-based simulations in order to obtain realistic model parameters. A method to improve the circuit behavior, i.e., to increase the output current, is proposed. It is concluded that the variation of the QD size presents the largest influence on the overall circuit behavior.