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Quantum dot location relevance into SET-FET circuits based on FinFET devices

Relevanz der Position des Quantenpunkts für auf FinFET-Bauelementen basierenden SET-FET-Schaltungen
 
: Amat, Esteve; Moral, Alberto del; Bausells, Joan; Perez-Murano, Francesc; Klüpfel, Fabian

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Institute of Electrical and Electronics Engineers -IEEE-:
XXXIII Conference on Design of Circuits and Integrated Systems, DCIS 2018. Proceedings : November 14th-16th, 2018, Lyon, France
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-7281-0172-9 (Print)
ISBN: 978-1-7281-0171-2
S.240-244
Conference on Design of Circuits and Integrated Systems (DCIS) <33, 2018, Lyon>
European Commission EC
H2020; 688072; IONS4SET
Englisch
Konferenzbeitrag
Fraunhofer IISB ()
single-electron transistor; Quantum Dot; FinFET; variability

Abstract
Hybrid SET-FET circuits are candidates to extend the SET usefulness for low power circuits and with high integration density. The location of quantum dot (QD) of the SET is usually expected at the centre of the tunneling barrier, but out this ideality the QD may not be precisely located. For this, to analyse the impact of the QD location variation will be of high interest to predict the hybrid circuit behaviour.

: http://publica.fraunhofer.de/dokumente/N-572286.html