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Single event sensitivity and de-rating of SiC power devices to heavy ions and protons

Poster presented at 30th European Conference on Radiation and its Effects on Components and Systems, RADECS 2019, Montpellier, France, September 16-20, 2019
: Steffens, Michael; Höffgen, Stefan; Kündgen, Tobias; Paschkowski, Eike; Poizat, Marc; Wölk, Dorothea

Poster urn:nbn:de:0011-n-5721453 (806 KByte PDF)
MD5 Fingerprint: fce1d61ac20f91ed67fbbd59f7205039
Erstellt am: 10.1.2020

2019, 1 Folie
European Conference on Radiation and its Effects on Components and Systems (RADECS) <30, 2019, Montpellier>
Poster, Elektronische Publikation
Fraunhofer INT ()
radiation effects; single event effects; SEB; SEGR; silicon carbide; SiC; SiC Schottky diodes; SiC MOSFETs; SiC JFET

We present single event tests performed on silicon carbide power devices (MOSFET, JFET, Schottky diodes). The data were taken across four campaigns with heavy ions up to Krypton at the Heavy Ion Facility, UCL, Louvain-la-Neuve, with Xenon ions at the G4 cave GANIL, Caen, with ultra-energetic Xenon at the H8 beamline at CERN and 45 MeV protons at the JULIC cyclotron, research centre Jülich. Throughout all tests the devices showed a high sensitivity to destructive single event induced failures even at low LETs or protons and significant derating.