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3D mask effects in high NA EUV imaging

: Erdmann, A.; Evanschitzky, P.; Bottiglieri, G.; Setten, E. van; Fliervoet, T.


Goldberg, K.A. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Extreme Ultraviolet (EUV) Lithography X : 25-28 February 2019, San Jose, California, Unites States
Bellingham, WA: SPIE, 2019 (Proceedings of SPIE 10957)
ISBN: 978-1-5106-2562-4
ISBN: 978-1-5106-2561-7
Art. 109570Z, 13 S.
Conference "Extreme Ultraviolet (EUV) Lithography" <10, 2019, San Jose/Calif.>
Fraunhofer IISB ()

Understanding, characterization and management of 3D mask effects, including non-telecentricity, contrast fading and best focus shifts, become increasingly important for the performance optimization of future extreme ultraviolet (EUV) projection systems and mask designs. Novel imaging configuration and central obscuration in high NA EUV projection systems introduce additional imaging effects. A simplified coherent imaging model, rigorous mask diffraction simulations, images for individual source areas and a hybrid mask model are employed to analyze the root causes of observed imaging artifacts. Based on this, several image enhancement strategies including modifications of mask and source are devised and investigated for lines/spaces.