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1700V 34mΩ 4H-SiC MOSFET With Retrograde Doping in Junction Field-Effect Transistor Region

: Ni, W.; Wang, X.; Xiao, H.; Xu, M.; Li, M.; Schlichting, H.; Erlbacher, T.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Proceedings : June 12-14th 2019, Xian, China
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-72810-286-3
ISBN: 978-1-72810-287-0
International Conference on Electron Devices and Solid-State Circuits (EDSSC) <15, 2019, Xian>
Fraunhofer IISB ()

In this paper, we designed and fabricated 1700V 4H-SiC MOSFETs. 2D TCAD tool was used to optimize the MOSFET cell and field limiting ring junction termination. Retrograde profile doping is formed by N+ ion implantation in the junction field-effect transistor region, which reduces the on-resistance effectively. Finally, the on-resistance of 34 milliohm and the threshold voltage of 1.56V are obtained from the fabricated MOSFETs. A subthreshold swing of 164 mV/decade was measured, and the interface state density was calculated to be 3.6E11 cm -2 eV -1 .