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Lifetime engineering in 4H-SiC materials and devices

Presentation held at 1st Sino-German Symposium on "Defect Engineering in SiC Device Manufacturing - Atomistic Simulations, Characterization and Processing" DESiC 2019, November 10-14, Beijing, China
 
: Rommel, Mathias; Erlekampf, Jürgen; Kallinger, Birgit; Weiße, Julietta; Berwian, Patrick; Friedrich, Jochen; Erlbacher, Tobias

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Präsentation urn:nbn:de:0011-n-5657448 (2.6 MByte PDF)
MD5 Fingerprint: dfdb03020203ab53ae41d7e729e85c64
Erstellt am: 28.11.2019


2019, 25 Folien
Sino-German Symposium on Defect Engineering in SiC Device Manufacturing - Atomistic Simulations, Characterization and Processing (DESiC) <1, 2019, Beijing>
Englisch
Vortrag, Elektronische Publikation
Fraunhofer IISB ()
carrier lifetime; 4H-SiC; silicon carbide; µ-PCD; DLTS

: http://publica.fraunhofer.de/dokumente/N-565744.html