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Depth profiling of ion-implanted 4H-SiC using confocal Raman spectroscopy

Poster presented at International Conference on Silicon Carbide & Related Materials, September 29th - October 04th, 2019, Kyoto, Japan
 
: Song, Ying; Xu, Zongwei; Liu, Tao; Rommel, Mathias; Wang, Hong; Fang, Fengzhou

:
Poster urn:nbn:de:0011-n-5657323 (3.3 MByte PDF)
MD5 Fingerprint: 2ba6157681662e7283f7545a0c9332d2
Erstellt am: 28.11.2019


2019, 1 Folie
International Conference on Silicon Carbide and Related Materials (ICSCRM) <2019, Kyoto>
Englisch
Poster, Elektronische Publikation
Fraunhofer IISB ()
4H-SiC; ion implantation; raman spectroscopy

: http://publica.fraunhofer.de/dokumente/N-565732.html