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Passivation and Microstructure of Dual Intrinsic a-Si:H Layers for SHJ Solar Cells

 
: Temmler, J.; Bodlak, L.; Moldovan, A.; Bivour, M.; Wolf, A.; Rentsch, J.

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Volltext urn:nbn:de:0011-n-5655000 (143 KByte PDF)
MD5 Fingerprint: ab56c759b3da57a17a54108a2484d0c2
Erstellt am: 29.11.2019


36th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2019 : Proceedings of the international conference held in Marseille, France, 09-13 September 2019
Marseille, 2019
ISBN: 3-936338-60-4
S.219-223
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <36, 2019, Marseille>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Oberflächen: Konditionierung; Passivierung; Lichteinfang; passivation; heterojunction; a-Si:H; microstructure

Abstract
We demonstrate a high passivation quality of dual a-Si:H(i) layers with excellent implied open circuit voltage values and a beneficial influence by an intermediate H2 plasma treatment made with an industrial inline PECVD tool from Meyer Burger Germany with radio frequency plasma sources (MAiA tool). Furthermore, the correlation between the gas flow ratio of hydrogen to silane during PECV deposition and the microstructure of the a-Si:H(i) layers represented by the relative bonding density of monohydrides (Si-H) and dihydrides (Si-H2) obtained by ATR-FTIR analysis is shown. Also the positive impact of an intermediate H2 plasma treatment is illustrated. Finally the resulting passivation quality reached by the use of dual a-Si:H(i) layers is depicted, which enables a significant improvement of the implied open-circuit voltage compared to the single layers, especially in the case of a-Si:H(i/p) layer stacks.

: http://publica.fraunhofer.de/dokumente/N-565500.html