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Large Area TOPCon Cells Realized by a PECVD Tube Process

 
: Feldmann, F.; Fellmeth, T.; Steinhauser, B.; Nagel, H.; Ourinson, D.; Mack, S.; Lohmüller, E.; Polzin, J.-I.; Benick, J.; Richter, A.; Moldovan, A.; Bivour, M.; Clement, F.; Rentsch, J.; Hermle, M.; Glunz, S.W.

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Volltext urn:nbn:de:0011-n-5654991 (714 KByte PDF)
MD5 Fingerprint: 62b3ee0a2068265d9c6ffc5c11d9a3cf
Erstellt am: 27.11.2019


36th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2019 : Proceedings of the international conference held in Marseille, France, 09-13 September 2019
Marseille, 2019
ISBN: 3-936338-60-4
S.304-308
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <36, 2019, Marseille>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Si-Solarzellen; passivation; PECVD; silicon; cell

Abstract
TOPCon is an appealing choice for next-generation solar cells as it minimizes surface recombination, enables low contact resistivities, and provides high thermal stability thereby rendering it compatible with screen-printed metallization. While TOPCon is commonly realized by low-pressure chemical vapor deposition (LPCVD), this paper discusses the use of a plasma-enhanced chemical vapor deposition (PECVD) tool, which are commonly used for deposition of SiNx or AlOx. It will be shown that thick screen-printing compatible TOPCon layers providing excellent surface passivation can be realized with such tool. Additionally, the firing stability of TOPCon/SiNx stack will be discussed and first solar cell results will be presented. The IV parameters of the best solar cell were: Voc = 691.2 mV, FF = 80.7%, Jsc = 40.4 mA/cm², and = 22.5%.

: http://publica.fraunhofer.de/dokumente/N-565499.html