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Plated Front Side Metallization on Transparent Conduction Oxide Utilizing Low-Cost APCVD SiO2 Insulating Layer

: Issa, E.; Nagel, H.; Guzik, L.; Javanbakht, H.; Coron, E.; Rädlein, E.; Glatthaar, M.; Glunz, S.W.

Volltext urn:nbn:de:0011-n-5654978 (443 KByte PDF)
MD5 Fingerprint: 920b5279fbc50d5946efd0ff04ea6e61
Erstellt am: 29.11.2019

36th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2019 : Proceedings of the international conference held in Marseille, France, 09-13 September 2019
Marseille, 2019
ISBN: 3-936338-60-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <36, 2019, Marseille>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Oberflächen: Konditionierung; Passivierung; Lichteinfang; Metallisierung und Strukturierung; heterojunction; ITO; metallization; electroplating

An important process step for galvanic metallization on transparent conducting oxide (TCO) is the preparation of a plating mask, which is an electrically insolating layer in the area where no metal deposition is desired. A polymer ink is often used for this purpose. A disadvantage, however, is that the front side of the solar cell is largely coated with polymer, hence large amounts of it must be recovered or, even worse, disposed of together with the solvents used in the later stripping process. To reduce costs, we take a different approach, namely screen-printing a polymer ink in the form of the later front metal grid, applying a full-area SiO2 coating at room temperature and lift off. This way we obtain a SiO2 instead of a polymer plating mask. At first glance, replacing polymer ink with SiO2 coating does not seem to be cost-effective. However, we have used a new atmospheric pressure chemical vapor deposition (APCVD) technology developed by us that potentially has very low investment and operating costs. In this work, we investigated this approach and demonstrated the performance of the SiO2 plating mask on heterojunction Si solar cells.