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Direct contact plating - Inline plating solution for ZEBRA IBC by local contacting

 
: Gensowski, Katharina; Cimiotti, Gisela; Eckert, Jonas; Arya, Varun; García La Roche, Juan; Scheffelmeier, Julien; Decker, Bastien; Galbiati, Giuseppe; Rudolph, Dominik; Kluska, Sven

:
Postprint urn:nbn:de:0011-n-5623482 (4.6 MByte PDF)
MD5 Fingerprint: 75c7114713318bed4e41b99e96213cfe
Copyright AIP
Erstellt am: 6.11.2019


Tous, L. ; American Institute of Physics -AIP-, New York:
8th Workshop on Metallization and Interconnection for Crystalline Silicon Solar Cells 2019. Proceedings : 13-14 May 2019, Konstanz, Germany
Woodbury, N.Y.: AIP, 2019 (AIP Conference Proceedings 2156)
ISBN: 978-0-7354-1901-8
Art. 020011, 10 S.
Workshop on Metallization & Interconnection for Crystalline Silicon Solar Cells <8, 2019, Konstanz>
European Commission EC
H2020-Low-cost, low-carbon energy supply - Developing the next generation technologies of renewable electricity and heating/cooling; 727523; NextBase
Next-generation interdigitated back-contacted silicon heterojunction solar cells and modules by design and process innovations
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

Abstract
An inline plating solution, in which electrolyte and contact system are arranged on the same side, is presented in this work. This concept allows plating onto cell concepts that do not have existing seed metallization on a significant share of surface area, e.g. ZEBRA IBC solar cell. Local contacting of Si or local metal structures is required to enable plating on these cell concepts. A new contacting scheme, which includes a stainless steel brush, was adapted into the existing inline plating tool of the company RENA Technologies GmbH. It allows local contacting of Si and of metalstructures without any temporary masking. First results of a plated contact grid on a ZEBRA IBC solar cell are successfully demonstrated. One result presents the simultaneous plating of n-type BSF and p-type emitter with finger heights of 18 μm ± 2 μm and of 10 μm ± 1 μm, respectively. In addition, important process development steps such as alignment are shown. An edge inhomogeneity and simultaneous plating on both polarities could be solved by introducing an electroless Ni seed. Furthermore, a plating voltage limitation proved also to be beneficial for plating homogeneity. Adaptations in the inline plating tool were also made.

: http://publica.fraunhofer.de/dokumente/N-562348.html