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Pre-deposition interfacial oxidation and post-deposition interface nitridation of LPCVD TEOS used as gate dielectric on 4H-SiC

Poster presented at International Conference on Silicon Carbide & Related Materials, September 29th - October 04th, 2019, Kyoto, Japan
 
: Lim, Minwho; Sledziewski, Tomasz; Rommel, Mathias; Erlbacher, Tobias; Kim, Hong-Ki; Kim, Seongjun; Shin, Hoon-Kyu; Bauer, Anton

:
Poster urn:nbn:de:0011-n-5619617 (600 KByte PDF)
MD5 Fingerprint: a8866c0df6022befa1b504f75c2c6222
Erstellt am: 24.10.2019


2019, 1 Folie
International Conference on Silicon Carbide and Related Materials (ICSCRM) <2019, Kyoto>
Englisch
Poster, Elektronische Publikation
Fraunhofer IISB ()

: http://publica.fraunhofer.de/dokumente/N-561961.html