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Investigations on current filamentation in PIN diodes using TLP measurements and TCAD simulations

: Scharf, Patrick; Sohrmann, Christoph; Holland, Steffen; Beyer, Volkhard

Postprint urn:nbn:de:0011-n-5619398 (1003 KByte PDF)
MD5 Fingerprint: 45aa73934eec38ce8e32038cec558bac
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Erstellt am: 24.10.2019

Institute of Electrical and Electronics Engineers -IEEE-:
49th European Solid-State Device Research Conference, ESSDERC 2019 : September 23-26, 2019, Kraków, Poland
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-7281-1538-2
4 S.
European Solid-State Device Research Conference (ESSDERC) <49, 2019, Kraków>
Bundesministerium für Bildung und Forschung BMBF (Deutschland)
Resilient Integrated Systems, Teilvorhaben: Methoden zur Analyse des Alterungs- und ESD-Verhaltens elektronischer Systeme
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IIS, Institutsteil Entwurfsautomatisierung (EAS) ()
electrostatic discharge (ESD); current filament; TCAD simulation; TLP measurement

Electrostatic discharge (ESD) can be considered as one of the main reliability risks for modern electronic systems which causes failure of semiconductor devices by an over current effect. One of the dominant failure mechanisms during an ESD event is thermal runaway caused by an avalanche breakdown characterized by a negative differential resistance. A current filament is very localized and inhomogeneous and causes damage due to self-heating, gate oxide or junction breakdown. In addition this coupled electrothermal problem can exhibit a dynamic pattern which is also known as current filament motion. Here, the formation and motion of current filaments is investigated on p+/n−/n+ (PIN) diodes using technology computer-aided design (TCAD) simulations and transmission line pulse (TLP) measurements. Special PIN diodes of different shape and size were fabricated and investigated in detail. Multiple filament formation has been observed in TLP measurements and is discussed by means of TCAD simulations.