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Diffusion of phosphorus and boron from Atomic Layer Deposition oxides into silicon

Diffusion von Phosphor und Bor von ALD-Oxiden in Silizium
 
: Beljakova, Svetlana; Pichler, Peter; Kalkofen, Bodo; Hübner, René

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Physica status solidi. A 216 (2019), Nr.17, Art. 1900306, 19 S.
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Deutsche Forschungsgemeinschaft DFG
KA 4358/1-1
Atomlagenabscheidung von Dotierstoffquellen für die Dotierung von Halbleiterstrukturen Charakterisierung und Modellierung der Drive-In Prozesse
Deutsche Forschungsgemeinschaft DFG
FR 713/14
Atomlagenabscheidung von Dotierstoffquellen für die Dotierung von Halbleiterstrukturen Charakterisierung und Modellierung der Drive-In Prozesse
Englisch
Zeitschriftenaufsatz
Fraunhofer IISB ()
dopant-containing ALD oxides; diffusion; TEM cross sections; Cluster; silicon

Abstract
Oxides containing group III or group V elements (B2O3/Sb2O5 and P2O5/Sb2O5) were grown by plasma-assisted atomic layer deposition (ALD) onto single-crystalline silicon and serve as dopant sources for conformal and shallow doping. Transport phenomena in ALD-oxide-Si structures during rapid thermal annealing (RTA) were investigated subsequently by X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS). The XPS and TEM analyses of the annealed ALD-oxide-Si structures demonstrate that the ALD oxide converts to a silicon oxide and partially evaporates during annealing. In addition, dopant-containing, spherical, partially crystalline particles were found to form in the oxide, and Si-P precipitates at the oxide/Si interface. In the silicon substrate, phosphorus and boron were observed to diffuse in at high concentrations, exceeding their solid solubility limits by roughly one order of magnitude. Experimental doping profiles of phosphorus and boron in silicon are compared with simulation results considering a slight injection of self-interstitials and dynamical defect clustering.

: http://publica.fraunhofer.de/dokumente/N-559132.html